Fengchun Jiang

Professor

Address:Zhengzhou University of Light Industry, School of Physics and Electronic Engineering

Phone: 13838017717

FAX:

E-mail:fengchunj@zzuli.edu.cn；fengchunj001@163.com

Websites:

Research Field and Research Interest:Semiconduct Quantum Structures

Educational Background：

3/2002-12/2005：M.S. in Theory of Physics. Physics Department, Henan Normal University, Xinxian, Henan, China.

9/2000-6/2001：Visiting Scholarin Theory and New Technology of Electrical Engineering. Theory of Electrical Engineering, Xi’an Jiaotong University, Xi’an, China.

9/1987--6/1988：Teaching Assistant in Theory of Physics. Physics Department, Beijing Normal University, Beijing, China.

9/1981--6/1985：B.S. in Physcs. Physics Department, Henan University, KaiFen, Henan, China

Teaching courses：College Physics；Physical Experiment

Main Publications：She has over twentypapers, eleven of which were collected by SCI

1. F. C. Jiang,CongxinXia,Y. M. Liu，S. Y. Wei, “Built-in electric field effect on the hydrogenicdonor impurity in wurtziteInGaN quantum dot”，

Physica E, 40(2008)2714，（SCI）

2.Fengchun Jiang, Congxin Xia, Shuyi Wei, “Hydrogenic impurity states in zinc-blendeInGaNquantum dot.”Physica B403(2008)165（SCI）

3. Fengchun Jiang，CongxinXia,Shuyi Wei，“Exciton states in wurtzite and zinc-blende InGaN/GaN coupled quantum dots.”Microelectronics Journal39(2008)74（SCI）

Research Projects：

Awards & Honor：

“The optical properties of low-dimesional nitride semiconductors”Henan province education department，Scientific and technological achievements won first prize

Affiliations：member of Physics teaching committe of south central China

AcademicActivities：